Impact of the Figures of Merit (FoMs) Definitions on the Variability in Nanowire TFET: NEGF Simulation Study

In this article, we investigate the effect of variability in p-type nanowire tunnel FET (TFET) using quantum mechanical transport simulations. The simulations have been carried out Nano Electronics Simulation Software (NESS) from University Glasgow. Random discrete dopants (RDDs) and work-function variations (WFV) investigated Our statistical reveal that key figures merit (FoMs) such as current generally decrease gate voltage decreases, threshold increases increases, dependences these FoM variabilities on criteria become stronger with switch characteristic ameliorated. Furthermore, it is interesting to find band offset heterostructure can more or less alleviate variability, especially around OFF-state.